Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

Abstract Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS 2 ), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept multifunctional MoS flash memory by combining channel with PEDOT:PSS floating layer. The proposed devices exhibit switching ratio high 2.3 × 10 7 , large window (54.6 ± 7.80 V), endurance (>1,000 cycles). As the film enables low-temperature solution-coating process mechanical flexibility, P-memory can be embedded on polyimide substrate over rigid silicon substrate, offering (over 1,000 cycle bending test). Furthermore, both bandgap that is desirable in optoelectronic operation, where charge carriers are stored differently gate depending light illumination. application combines photodiodes functions, demonstrate multilevel programming based intensity color.